Abstract

High-resolution nonlinear laser spectroscopy provides a method which permits frequency domain measurements of excitation and relaxation of excitons in quantum well structures, even in the presence of inhomogeneous broadening due to well width fluctuations. Such measurements can provide information on the homogeneous line shape as well as other phenomena including excitation relaxation, tunneling, spectral and spatial diffusion and other relaxation phenomena which determine the optical properties of these materials. We discuss the application of these methods to the study of excitons in GaAs/AIGaAs quantum well structures.¹

© 1989 Optical Society of America