Abstract

The properties of the metal-semiconductor interface are not well-understood in general. In specific, we are interested in the uniformity of the electric field in two-dimensional quantum well devices in the high resistivity limit. We have contructed a high spatial resolution differential imaging system with which we have studied the spatial distribution of the excitonic electroabsorption in a number of GaAs quantum well devices with different contact geometries, preparation and material processing. These results have particular relevance in light of the recent use of excitonic electroabsorption for the measurement of femtosecond electrical pulses [1].

© 1989 Optical Society of America