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  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper THNN4

Nanometer scale bandgap modulation by disorder of a GaAs/AlGaAs quantum well

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We report on the use of a shallow zinc diffusion to disorder selectively a GaAs quantum well. A lateral bandgap modulation on a nanometer scale is created by this diffusion. A silicon lift-off technique is used to define a striped diffusion mask with silicon stripes as narrow as 1200 Å. Cathodoluminescence (CL)1 studies of the sample confirm complete disordering of the quantum well in the unmasked regions, while areas with a narrow stripe mask show the emergence of a luminescence peak which is blue shifted with respect to the quantum well.

© 1989 Optical Society of America

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