Abstract
Semiconductor quantum wells (QWs) show enhanced excitonic behavior partly due to quantum confinement of carriers, resulting in well-resolved excitonic absorption peaks even at room temperature. Recent studies of femtosecond dynamics of excitonic absorption in GaAs[l] and InGaAs QWs[2] have revealed the fact that excitons produce more absorption bleaching than equal densities of free e-h pairs and good agreement between the homogeneous excitonic absorption linewidth broadening and the exciton ionization time at room temperature.
© 1991 Optical Society of America
PDF ArticleMore Like This
P. C. Becker, D. Lee, A. M. Johnson, A. G. Prosser, R. D. Feldman, R. F. Austin, and R. E. Behringer
WeD5 International Quantum Electronics Conference (IQEC) 1992
D. Lee, P. C. Becker, A. M. Johnson, A. G. Prosser, R. D. Feldman, R. F. Austin, and R. E. Behringer
QWB5 Quantum Electronics and Laser Science Conference (CLEO:FS) 1992
D. Lee, A. M. Johnson, J. E. Zucker, R. D. Feldman, and R. E Austin
QThG2 Quantum Electronics and Laser Science Conference (CLEO:FS) 1991