Abstract
ZnSe-based wide-band-gap II-VI compound semiconductor heterostructures are candidates for optoelectronic applications at short visible wavelengths, especially in the blue region of the spectrum. For electro-optic and nonlinear modulators used at excitonic resonances, a basic obstacle has been the very large exciton-LO phonon coupling (Fröhlich interaction), which for bulk ZnSe is six to eight times as large as that for GaAs. As a consequence, exciton dissociation probability by LO-phonon absorption is very large at room temperature and obliterates any distinct spectral features. On the other hand, because the bulk exciton binding energy for ZnSe is Ex ≈ 17 meV and that for the LO-phonon is ħωLO = 31 meV, there is a possibility for increasing the exciton binding by quantum-well confinement so as to reach the condition Ex ≥ ħωLO for reducing the exciton-LO-pho- non scattering rate to continuum states.
© 1991 Optical Society of America
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