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Conferences > QELS > 1992 > QFD > QFD5
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper QFD5

Excitons in strain-induced quantum-well wires and dots

I. Hsing Tan, Takashi Yasuda, Richard Mirin, David Lishan, Evelyn Hu, John Bowers, and James Merz

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Abstract

Recently, it has been shown that introduction of modulated strain could be used to achieve lateral quantum confinement of carriers.1 We use this technique to fabricate strain-induced quantum well wires (SIQWWs) and strain-induced quantum well dots (SIQWDs) with high quantum efficiency, and study their subband transition probability due to lateral quantum confinement and valence-bandmixing effects.

© 1992 Optical Society of America

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