Abstract
Recently, it has been shown that introduction of modulated strain could be used to achieve lateral quantum confinement of carriers.1 We use this technique to fabricate strain-induced quantum well wires (SIQWWs) and strain-induced quantum well dots (SIQWDs) with high quantum efficiency, and study their subband transition probability due to lateral quantum confinement and valence-bandmixing effects.
© 1992 Optical Society of America
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