Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper QMF7

Carrier-carrier interactions in the presence of dense plasmas in GaAs

Not Accessible

Your library or personal account may give you access

Abstract

Quantitative understanding of Coulomb-mediated carrier-carrier interactions relies on properly designed experiments and theories. Absorption hole-burning measurements near the band edge of undoped and doped GaAs/AlGaAs quantum wells (QW) have been made by Knox et al.1 They found that the presence of a dense Fermi sea of electrons (Ned~3×1011cm2) produces an extraordinarily fast carrier thermalization, whereas the same density of holes yields a thermalization time close to that of undoped samples; also in the undoped sample, even for an injected electron-hole density (Nehph~5×1011cm2), the thermalization time is still more than 3 times longer than that in the n-type doped sample.

© 1992 Optical Society of America

PDF Article
More Like This
Femtosecond Carrier-Carrier Interactions in GaAs

T. Gong, K. B. Ucer, L. X. Zheng, G. W. Wicks, J. F. Young, P. J. Kelly, and P. M. Fauchet
FB2 International Conference on Ultrafast Phenomena (UP) 1992

FEMTOSECOND DYNAMICS OF CARRIER-CARRIER SCATTERING IN QUANTUM WELLS IN THE PRESENCE OF A DENSE THERMALIZED FERMI-SEA

W. H. Knox, D. S. Chemla, and G. Livescu
TuA2 International Quantum Electronics Conference (IQEC) 1988

Femtosecond Carrier-Carrier Interaction Dynamics in doped-GaAs

T. Furuta and A. Yoshii
MC5 International Conference on Ultrafast Phenomena (UP) 1992

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved