Abstract

There has been great interest in III–V strained-layer superlattice (SLS) semiconductor structures because they exhibit relatively small inplane effective hole masses and hence large hole mobilities. This low effective mass can significantly reduce the threshold current in semiconductor lasers as well as increase the speed of complimentary electronic circuits. Furthermore, the band gaps associated with some indium compounds correspond to wavelengths with low loss and minimum dispersion in silica fibers.

© 1992 Optical Society of America