Electro-optic bistability in planar GaAs surface-barrier structures

N. M. Ushakov; V. V. Gusev; K. U. Kravzov; V. I. Petrosjan

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 1992),
paper QWC7

Electro-optic bistability in planar GaAs surface-barrier structures

N. M. Ushakov, V. V. Gusev, K. U. Kravzov, and V. I. Petrosjan

Quantum Electronics and Laser Science Conference 1992

Anaheim, California United States
10–15 May 1992
ISBN: 1-55752-540-5

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QELS Poster Session 2 (QWC)

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N. M. Ushakov, V. V. Gusev, K. U. Kravzov, and V. I. Petrosjan, "Electro-optic bistability in planar GaAs surface-barrier structures," in Quantum Electronics and Laser Science Conference, E. Ippen, S. Chu, J. Shah, and C. Weiman, eds., Vol. 13 of OSA Technical Digest (Optica Publishing Group, 1992), paper QWC7.

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Abstract

Planar devices with surface-barrier structures (SBS), particularly with a double Schottky-Mott barrier such as DSI-diodes,¹ have special standing among SBS because of their fast action and high sensitivity. Internal amplification of photocurrent,² as photocurrent bistability, is an important new property of SBS. We present experimental results on the influence of optical radiation on photocurrent bistable operation of SBS as dark-current bistability due to reverse voltage.

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