Abstract
A key point for the operation of a near-gap light-modulating semiconductor device is a well-preserved exitonic absorption at room temperature.1 Compared with that of the III–V compounds, the situation in the more polar II–IV compounds is considerably more challenging owing to the much stronger coupling with the LO phonons that drastically broadens the exciton peaks at elevated temperatures. This accounts for the fact that the exiton absorption features for bulk CdTe disappear at T ≃ 200 K in spite of an exciton binding energy and an oscillator strength that are larger than those for GaAs.
© 1993 Optical Society of America
PDF ArticleMore Like This
N. Pelekanos, J. Ding, A. V. Nurmikko, H. Luo, N. Samarth, and J. Furdyna
QWD14 Quantum Electronics and Laser Science Conference (CLEO:FS) 1991
H. Kalt, J. Collet, B. Feuer Bacher, S. D. Baranovskii, R. Saleh, P. Thomas, Le Si Dang, and J. Cibert
PTu085 International Quantum Electronics Conference (IQEC) 1992
Anthony M. Johnson
TPLS2 Inaugural Forum for the Research Center for Optical Physics (RCOP) 1993