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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper QThA7

Strong room-temperature exciton absorption and electroabsorption in CdTe/(Cd,Zn)Te quantum wells at near-IR wavelengths

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Abstract

A key point for the operation of a near-gap light-modulating semiconductor device is a well-preserved exitonic absorption at room temperature.1 Compared with that of the III–V compounds, the situation in the more polar II–IV compounds is considerably more challenging owing to the much stronger coupling with the LO phonons that drastically broadens the exciton peaks at elevated temperatures. This accounts for the fact that the exiton absorption features for bulk CdTe disappear at T ≃ 200 K in spite of an exciton binding energy and an oscillator strength that are larger than those for GaAs.

© 1993 Optical Society of America

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