Abstract
The intersubband scattering rate in semiconductor quantum wells is a fundamental physical parameter that is also relevant in many device applications, such as infrared detectors and sources. Our sample, grown by a molecular-beam epitaxy lattice matched on a semi-insulating InP substrate, consists of forty 10.5-nm-thick InGaAs wells doped with Si to n = 6 × 1017 cm−3 and separated by 10-nm AlInAs undoped barriers (see inset of Fig. 1). FTIR absorption measurements as a function of temperature in a multipass waveguide geometry confirmed the transition energies.
© 1993 Optical Society of America
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