Abstract
The implementation of In0.53Ga0.47As as a material in optical and electro-optical devices, requires a fundamental understanding of the carrier dynamics and nonlinear optical properties that result from ultrashort pulse photoexcitation. The investigation of the carrier dynamics of GaAs has been reported extensively.1–4 Here we report the results of our experimental investigation and modeling of the ultrafast carrier dynamics of bulk and multiple-quantum-well (MQW) In0.53Ga0.47As as a function of excitation intensity and wavelength.
© 1993 Optical Society of America
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