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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper QTuB6

Direct observation of hot phonon reabsorption in GaAs quantum wells from time-resolved Raman scattering

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Abstract

Multiple-beam, time-resolved (~1 ps) Raman scattering experiments were performed on an undoped, 20-nm-thick GaAs quantum-well sample. One laser, tuned just above the lowest subband gap energy was used to inject a cold electron-hole plasma of variable density in order to determine its effect on the dynamics of nonequilibrium LO phonons generated and detected by pump and Raman probe pulses tuned to the split-off resonance. Figure 1 shows the influence of this cold plasma on the lifetime of the I.O phonons: it. is reduced from 4.5 to 1.9 ps on increasing the plasma density from 0 to ~3×1011 cm−2.

© 1993 Optical Society of America

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