Abstract

Although transient velocity-overshoot characteristics have been an important theme in the study of carrier dynamics, most work has concentrated on theoretical approaches, such as Monte Carlo simulation. However, the rapid development of tunable femtosecond lasers and improved measurement techniques have made it easier to investigate picosecond carrier dynamics experimentally. In this work the transient velocity-overshoot dynamics of photoexcited carriers in GaAs under high- field conditions have been studied.

© 1993 Optical Society of America