Abstract

The effect of the photogeneration of electron-hole pairs (EHP) on the linear optical response of material is an important and well-understood phenomenon,¹ However, the analogous problem in nonlinear optics has only recently attracted attention.² We have studied the effect of the photogeneration of EHP on the interfacial second-order nonlinear optical response of ZnSe/GaAs(001) heterostructures. Besides being intrinsically interesting as a new phenomenon, we have shown that this phenomenon provides a unique method for investigating electronic trap centers at interfaces. The quantities to which we are sensitive include the charge and location of the interfacial defect and the lifetime of trapped charges on these defect centers. These quantities are essential for a full understanding of charge transport and carrier lifetime in heterostructures. This understanding may, in turn, help us to design better photodetectors, diode lasers, and light-emitting diodes.

© 1993 Optical Society of America