Picosecond photoluminescence study of tunneling in InGaP/ InAlP asymmetric double quantum wells

O. Buccafusca; J. L. A. Chilla; C. S. Menoni; J. J. Rocca; M. J. Hafich; L. M. Woods; G. Y. Robinson

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 1993),
paper QWH28

Picosecond photoluminescence study of tunneling in InGaP/ InAlP asymmetric double quantum wells

O. Buccafusca, J. L. A. Chilla, C. S. Menoni, J. J. Rocca, M. J. Hafich, L. M. Woods, and G. Y. Robinson

Quantum Electronics and Laser Science Conference 1993

Baltimore, Maryland United States
2–7 May 1993
ISBN: 1-55752-302-9

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QELS Wednesday Poster Session (QWH)

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O. Buccafusca, J. L. A. Chilla, C. S. Menoni, J. J. Rocca, M. J. Hafich, L. M. Woods, and G. Y. Robinson, "Picosecond photoluminescence study of tunneling in InGaP/ InAlP asymmetric double quantum wells," in Quantum Electronics and Laser Science Conference, D. Auston, D. Steel, T. Heinz, and G. Stegeman, eds., Vol. 12 of OSA Technical Digest (Optica Publishing Group, 1993), paper QWH28.

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Abstract

Tunneling phenomena in semiconductors are being actively investigated both for fundamental reasons and for possible device applications,^1,2 Herein we report the first tunneling measurements, to our knowledge, in InGaP/InAlP asymmetric double quantum wells (ADQW’s), which are suitable for the design of modulators that operate in the visible region of the spectrum. Steady-state and time-resolved photoluminescence (PL) measurements were conducted on ADQW’s with different barrier thicknesses as a function of carrier density and temperature.

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