InAsSb strained quantum-well lasers emitting in the 4-μm band

H. K. Choi; G. W. Turner; H. Q. Le

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 1995),
paper JWE1

InAsSb strained quantum-well lasers emitting in the 4-μm band

H. K. Choi, G. W. Turner, and H. Q. Le

Quantum Electronics and Laser Science Conference 1995

Baltimore, Maryland United States
22–26 May 1995
ISBN: 1-55752-402-5

From the session
Session on Far-Infrared Sources II (JWE)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
H. K. Choi, G. W. Turner, and H. Q. Le, "InAsSb strained quantum-well lasers emitting in the 4-μm band," in Quantum Electronics and Laser Science Conference, T. Heinz, G. Stegeman, J. Bokor, and R. Slusher, eds., Vol. 16 of OSA Technical Digest (Optica Publishing Group, 1995), paper JWE1.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Save article

Abstract

Recently, the development of high-performance III–V diode lasers emitting in the mid-infrared (2–5 μm) band has generated increased interest.^1–10 Such lasers are very desirable for many applications such as remote sensing, pollution monitoring, and molecular spectroscopy.

PDF Article

More Like This

Theoretical Analysis of Gain in Compressive Strained Quantum Well InAlAsSb/GaSb Structures for 3-4 μm Lasers

R.F. Nabiev, C.J. Chang-Hasnain, and H.K. Choi
MB.6 Semiconductor Lasers: Advanced Devices and Applications (ASLA) 1995

An MOCVD-grown, pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 µm

S. R. Kurtz, R. M. Biefeld, A. A. Allerman, A. J. Howard, M. H. Crawford, and M. W. Pelczynski
CTuO1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1996

GaInAsSb Mid-infrared diode lasers

D. L. Spears
CFE6 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1994

Previous Article Next Article