Abstract
InAs/GalnSb broken-gap superlattices (BGSLs) are attractive candidates for midwave-infrared (MWIR) laser active regions because they possess sufficient degrees of freedom to tailor the valence band structure while keeping the strain low enough to prevent the formation of misfit dislocations. The valence band structure can be optimized to suppress Auger recombination and to reduce the density of states at k = 0, thereby reducing laser threshold. Here we report the first MWIR MQW laser diodes with InAs/Ga0 75In0.25Sb BGSL quantum wells. The laser structures employ Ga0.75In0.25As0.22Sb0.78 barrier layers, and InAs/AlSb superlattice cladding layers with an AlSb blocking layer deposited directly on top of the p-type superlattice clad for enhanced electron confinement. The Ga„ 75In0 75As0 22Sb0 78 barriers yield a type- 1 MQW with the BGSL active region, confining both electrons and holes, as well as enhancing the optical confinement factor of the structure due to their relatively large refractive index.
© 1995 Optical Society of America
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