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Conferences > QELS > 1995 > JWE > JWE3
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper JWE3

High power (1.3 W) optically pumped midwave-IR (3.4 μm) InAs/InAsxSb1-x superlattice lasers

Y.-H. Zhang and H. Q. Le

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Abstract

Midwave infrared lasers have great potentials in many applications such as pollution monitoring, medical diagnostics, explosive detection, and military counter-measures. This paper reports experimental results on optically pumped InAs/InAsxSb1-x type-11 superlattice (SL) laser structures grown by modulated-molecular-beam epitaxy (MMBE) InAs substrates.

© 1995 Optical Society of America

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High-power (1.3-W) optically pumped midwave-infrared (3.4-μm) InAs/InAsxSb1-x superlattice lasers

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