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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper QFF5

Direct mid-infrared spectroscopic measurements of hole relaxation in InGaAs/AlGaAs quantum wells

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Abstract

Measurements of infrared bleaching1 and anti-Stokes Raman scattering2 in n-type QWs have revealed an electron relaxation time ranging from less than 1 ps to 10 ps when the intersubband transition energy is larger than the LO phonon energy. The relaxation time depends on the excitation intensity and is influenced by intervalley scattering, LO-phonon screening, and hot phonons. In p-type quantum wells, the relaxation time is expected to be shorter because the density of states is larger and the band structure and the scattering mechanisms are different. Here, we report the first direct measurement of the relaxation time of holes in p-type quantum wells by the pumpprobe technique using ~1-ps pulses generated by a mid-infrared free-electron laser.

© 1995 Optical Society of America

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