Abstract

Advances in the growth and fabrication of semiconductor structures with features having dimensions comparable to (or less than) typical mean-free-path lengths and advances in the development of femtosecond laser sources with temporal resolutions less than the mean scattering times have made possible the investigation of coherent and ballistic transport in semiconductors. To date, for example, three-terminal (launcher-base-detector) devices have been used to study transport in the near-ballistic regime,^1,2 and velocity overshoot has been reported in transient-photocurrent experiments.³

© 1995 Optical Society of America