Abstract

The research of surfaces and interfaces (e.g. semiconductor-liquid) is driven by a host of technological applications: solid state devices, solar energy conversion, imaging, and electrochemistry. It is necessary to further our knowledge of device performance limiting effects such as carrier relaxation to enhance and control switching speed, energy conversion efficiency, etc. We have túne and energy resolved the relaxation dynamics of hot electrons in undoped MBE grown surface GaAs (100) quantum wells. The first observation of electron transfer from clean, unpassivated, surface GaAs quantum wells is also presented.

© 1995 Optical Society of America