Abstract

Recently there have been reports of InGaAs quantum dots formed by the Stranski- Krastanow growth mode by using molecular-beam epitaxy (МBБ) on GaAs (100) substrates.1 There is also a report of InGaAs quantum dots grown by MOCVD on GaAs (100) tilted between 0° and 41° tow'ard (111)B.2 These structures are formed because the highly strained InGaAs epilayer decreases its energy by the formation of islands after a layer-by-layer growth.

© 1995 Optical Society of America

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