Cross-phase modulation in bulk and MQW AIGaAs waveguides at half the band gap

A. Villeneuve; J. U. Kang; G. I. Stegeman; J. S. Aitchison; J. S. Aitchison; D. C. Hutchings; D. C. Hutchings

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 1995),
paper QWD29

Cross-phase modulation in bulk and MQW AIGaAs waveguides at half the band gap

A. Villeneuve, J. U. Kang, G. I. Stegeman, J. S. Aitchison, and D. C. Hutchings

Quantum Electronics and Laser Science Conference 1995

Baltimore, Maryland United States
22–26 May 1995
ISBN: 1-55752-402-5

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A. Villeneuve, J. U. Kang, G. I. Stegeman, J. S. Aitchison, and D. C. Hutchings, "Cross-phase modulation in bulk and MQW AIGaAs waveguides at half the band gap," in Quantum Electronics and Laser Science Conference, T. Heinz, G. Stegeman, J. Bokor, and R. Slusher, eds., Vol. 16 of OSA Technical Digest (Optica Publishing Group, 1995), paper QWD29.

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Abstract

In many all-optical switching applications, such as polarization switching,¹ demultiplexing,² and soliton steering,³ the value of the cross-phase modulation (XPM) relative to the self-phase modulation (SPM) determines the power requirements and the behavior of devices. We have found the XPM between TE and TM modes, or between TM and TE Modes, to be approximately equal to the SPM (TE) for bulk AlGaAs. However, in the MQW case we found the XPM to be equal to the SPM when a TM- polarized pump was used and to be equal to half the magnitude of the SPM when a TE-polarized pump was used.

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