Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > QELS > 1996 > JTuH > JTuH7
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper JTuH7

Ultralow threshold current 780-nm vertical-cavity surface-emitting lasers with oxide current aperture

Hyun-Eoi Shin, Yung-Gu Zoo, and Yong-Hee Lee

Not Accessible

Your library or personal account may give you access

Abstract

Vertical-cavity surface-emitting lasers (VCSELs) operating at 780 run usually have AlAs/GaAs superlattice active region,1 but no good performance is reported yet. We demonstrate the new type of 780 nm VCSELs having Al0.11Ga0.89As quantum wells (QWs) as the active medium. Oxide aperture is located just above the active region for efficient current confinement.

© 1996 Optical Society of America

PDF Article
More Like This
Design of Low-Threshold Oxide-confined Vertical Cavity Surface Emitting Lasers

H. Bissessur, T. Mukaihara, M. Abe, F. Koyama, and K. Iga
18P.38 Optoelectronics and Communications Conference (OECC) 1996

High-power selectively oxidized vertical-cavity surface-emitting lasers

B. Weigl, G. Reiner, M. Grabherr, and K. J. Ebeling
JTuH2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1996

Low threshold current vertical-cavity surface-emitting lasers with enhanced resistance to heating

Gye Mo Yang, Michael H. MacDougal, and P. Daniel Dapkus
TuD.4 Semiconductor Lasers: Advanced Devices and Applications (ASLA) 1995

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use