Abstract
The Si-SiO2 interface is the most important interface in high technology. As a buried interface it has been extensively investigated with use of the noninvasive, surface specific tool of second harmonic (SH) generation. Previously1 we have shown that in single beam experiments employing a 100 fs, 76 MHz, 770-nm source, the SH signal increased by a factor of up to 5 on a 10 s time scale for a silicon wafer with native oxide. We suggested that this was due to enhancement of the interfacial nonlinear susceptibility by a DC electric field resulting from electron excitation and trapping following absorption of <105 third harmonic photons (257 nm) generated by the incident beam. Here we provide confirmation of this interpretation of the time-dependent SH signal and have used an independent UV beam to provide insight into details of electron trapping processes.
© 1996 Optical Society of America
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