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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper QThC6

Fabrication and μ-PL imaging of ridge-type InGaAs quantum wires grown on a (110) cleaved plane of AIGaAs/GaAs superlattice

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Abstract

Selective growth on patterned substrates is one of the most attractive techniques to fabricate semiconductor quantum wires (QWRs).1-5 However, the density of QWRs is limited by lithographic process in most cases and the size fluctuation of mask pattern cannot be avoided. If a cleaved facet of AIGaAs/GaAs superlattice is used as a selective growth mask, QWRs with high density and very small quantum wires. Finally, the QWRs were buried with GaAs. Figure 1 shows a scanning microimage of the cross section of the sample.

© 1996 Optical Society of America

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