Ultrafast dephasing dynamics and electronic level structure of InP nanocrystals

G. Cerullo; U. Banin; A. A. Guzelian; C. J. Bardeen; R. W. Schoenlein; A. P. Alivisatos; C. V. Shank

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 1996),
paper QThC8

Ultrafast dephasing dynamics and electronic level structure of InP nanocrystals

G. Cerullo, U. Banin, A. A. Guzelian, C. J. Bardeen, R. W. Schoenlein, A. P. Alivisatos, and C. V. Shank

Quantum Electronics and Laser Science Conference 1996

Anaheim, California United States
2–7 June 1996
ISBN: 1-55752-445-9

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Quantum Confined Systems (QThC)

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G. Cerullo, U. Banin, A. A. Guzelian, C. J. Bardeen, R. W. Schoenlein, A. P. Alivisatos, and C. V. Shank, "Ultrafast dephasing dynamics and electronic level structure of InP nanocrystals," in Quantum Electronics and Laser Science Conference, R. Freeman and P. Corkum, eds., Vol. 10 of OSA Technical Digest (Optica Publishing Group, 1996), paper QThC8.

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Abstract

Semiconductor nanocrystals of size smaller than the exciton Bohr radius are interesting as prototypical systems for the physics of quantum confinement. To date, most studies have been limited to II-VI materials such as CdSe.^1–4 Recent advances in the synthesis process now allow one to provide monodisperse samples of nanocrystals of the III-V material InP.^5,6 We use femtosecond three pulse photon echo (3PPE) experiments^1,2 and nanosecond transient hole-burning (HB) spectroscopy^3,4 to investigate the electronic structure and dephasing dynamics in this novel material.

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