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  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper QThD2

Competition of intervalence band absorption and interband gain in strained tetrahedral semiconductors

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Abstract

The absorption and gain of electromagnetic radiation by electronic transitions over the fundamental gap as a function of carrier density, wavelength, polarization of radiation, and strain has been well characterized.1 In contrast, the influence of these parameters on the absorption by intervalence band transitions (IVBA) has been investigated less thoroughly. Such transitions occur at higher values of the crystal momentum, where the interaction of the valence bands with the conduction band is nonnegligible. Consequently, at least an 8-band k•p model is required including the lowest conduction (C), heavy hole (HH), light hole (LH), split-off (SO) band, and spin, to allow optical matrix elements to be consistently calculated according to actual symmetries of wave functions.

© 1996 Optical Society of America

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