Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper QTuB10

Excitan transfer among interface islands in growth-interrupted single quantum wells

Not Accessible

Your library or personal account may give you access

Abstract

Photoluminescence (PL) measurements within the temperature range 4.1-155 K are made on five spatially separated GaAs/Gao.eAlo.iAs single quantum wells, with nominal widths of 4, 6, 11, 19, and 25 monolayers, and with growth interruption of 90 seconds at each interface. The excitation power is 5 mW of Ar+ laser. The results are presented in Figs. 1-3. The insets show the integrated PL intensity of each peak normalized by the total intensity at each temperature.

© 1996 Optical Society of America

PDF Article
More Like This
Large blue shift due to band filling at interface islands in coupled quantum wells

A. G. Cui, O. Gorbounova, Y. J. Ding, J. V. D. Veliadis, S. J. Lee, J. B. Khurgin, and K. L. Wang
QME1 Quantum Electronics and Laser Science Conference (CLEO:FS) 1996

Monolayer-fluctuation-free interface formation by the cleaved-edge overgrowth method with growth interruption for uniform quantum wires and wells

Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, and Ken W. West
QMF5 Quantum Electronics and Laser Science Conference (CLEO:FS) 2001

Evidence for strong spatially localized band-filling effects in interface islands for extremely low laser intensities

Y. J. Ding, D. C. Reynolds, S. J. Lee, J. B. Khurgin, W. S. Rabinovich, and D. S. Katzer
QFF2 Quantum Electronics and Laser Science Conference (CLEO:FS) 1997

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.