Abstract
Photoluminescence (PL) measurements within the temperature range 4.1-155 K are made on five spatially separated GaAs/Gao.eAlo.iAs single quantum wells, with nominal widths of 4, 6, 11, 19, and 25 monolayers, and with growth interruption of 90 seconds at each interface. The excitation power is 5 mW of Ar+ laser. The results are presented in Figs. 1-3. The insets show the integrated PL intensity of each peak normalized by the total intensity at each temperature.
© 1996 Optical Society of America
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