Abstract
The present work is a study of FIR emission from p-type GaAs/Al1-xGaxAs and Ge/Ge1-xSix structures caused by direct transitions of hot 2D holes between quantum-well subbands and modulation of FIR laser radiation under heating of 2D holes in quantum wells (QW). These phenomena were not observed before.
© 1996 Optical Society of America
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