Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper QTuD4

Infrared-multiphoton-excited luminescence in porous silicon

Not Accessible

Your library or personal account may give you access

Abstract

Porous Si is known to be a potential material that could lead to novel, Si-based luminescent devices. Efficient visible photoluminescence by UV irradiation of porous Si can be readily observed. Direct carrier excitation followed by carrier relaxation and finally electron-hole recombination is responsible for the observed luminescence. The luminescent wavelength depends on the effective cluster size of the porous Si.

© 1996 Optical Society of America

PDF Article
More Like This
Multiphoton excitation of luminescence from porous silicon

RP Chin, D Kim, YR Shen, and V Petrova-Koch
WL14 International Quantum Electronics Conference (IQEC) 1996

Strong Optical Nonlinearities and Ultrafast Carrier Dynamics in Luminescent and Nonluminescent Porous Silicon

Victor I. Klimov, Duncan McBranch, and Vladimir A. Karavanskii
NThE.16 Nonlinear Optics: Materials, Fundamentals and Applications (NLO) 1996

Anisotropic infrared-upconversion luminescence generation in porous silicon

Jian Wang, Hong-Bing Jiang, Wen-Cheng Wang, Jia-Biao Zheng, Fu-Long Zhang, Ping-Hai Hao, Xiao-Yuan Hou, and Xun Wang
CThP5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved