Abstract
Porous Si is known to be a potential material that could lead to novel, Si-based luminescent devices. Efficient visible photoluminescence by UV irradiation of porous Si can be readily observed. Direct carrier excitation followed by carrier relaxation and finally electron-hole recombination is responsible for the observed luminescence. The luminescent wavelength depends on the effective cluster size of the porous Si.
© 1996 Optical Society of America
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