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Conferences > QELS > 1997 > JWA > JWA7
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper JWA7

Defect-enhanced Auger recombination and high-carrier-density phenomena in low-temperature grown GaAs

T. S. Sosnowski, T. B. Norris, P. Grenier, and J. F. Whitaker

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Abstract

Gallium arsenide grown at low temperatures (LT-GaAs) is a nonstoichiometric material containing large amounts of excess arsenic incorporated into the lattice as a high concentration of defects such as As antisites and Ga vacancies, as well as As precipitates.

© 1997 Optical Society of America

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