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Conferences > QELS > 1997 > QFF > QFF2
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper QFF2

Evidence for strong spatially localized band-filling effects in interface islands for extremely low laser intensities

Y. J. Ding, D. C. Reynolds, S. J. Lee, J. B. Khurgin, W. S. Rabinovich, and D. S. Katzer

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Abstract

After growth interruption at interfaces, one broad photoluminescence (PL) peak breaks into multiple ones with separate emission energies.1 This is due to recombination of free excitons and localized ones in interface islands with their sizes larger than the exciton radius. Because of the formation of these interface islands, the well widths at these islands generally differ by multiple monolayers with respect to the designed width.2 However, the area ratios among all these islands of different well widths are random.

© 1997 Optical Society of America

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