Abstract
Efficient refractive index gratings can be recorded in nonlinear materials through several mechanisms. Among them, the photorefrac-tivc effect exhibits a long storage duration but, at least at low laser fluences, a slow response time because of the buildup of the space charge field. On the contrary, free-carrier-induced refractive index gratings can be recorded quasiinstantaneously in semiconductors through absorption of interfering laser beams; however, because of thermal diffusion, the lifetime of these gratings (few to tens of picoseconds, depending on the grating period) is much smaller than that of the free carriers themselves.
© 1997 Optical Society of America
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