Abstract
Femtosecond optical excitation of bulk semiconductors leads to the emission of coherent far infrared pulses. The emission results from instantaneous polarization, ballistic transport, and drift of the photogenerated carriers in the surface or built-in fields of the semiconductors.1,2 Since the ballistic motion of hot photogenerated carriers is destroyed within several hundred femtoseconds, the THz pulse duration is limited to a few wave cycles.3
© 1997 Optical Society of America
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