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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1999),
  • paper QPD7

Room temperature lasing action in an InGaN quantum dot laser under optical excitation

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Abstract

In order to realize superior characteristics such as lower threshold current, quantum dot (QD) structure in nitride semiconductor has been investigated for laser applications [1-3]. Although stimulated emission in GaN dot laser structures was observed [4], lasing oscillation has not been achieved. In this paper, we demonstrate the first lasing emission from a semiconductor laser with stacked In0.2Ga0.8N QDs embedded in the active layer at room temperature under optical excitation. A clear threshold at a pump energy of 6.0 mJ/cm“. Above the threshold, the emission was strongly polarized in the transverse emission (TE) mode. The linewidth of the emission spectra was reduced to below 0.1 nm (resolution limit). These results clearly indicate the laser action in the In0.2Ga0.8N QD laser.

© 1999 Optical Society of America

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