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  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1999),
  • paper QThG20

Ultrafast carrier trapping in oxygen-and aluminum-implanted GaAs

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Abstract

In recent years, there has been active research in developing semiconducting materials with high resistivity and ultrafast free carrier lifetime for applications in electronic and optoelectronic devices. One of the most widely used materials is low-temperature GaAs (LT-GaAs), which exhibits free carrier lifetimes under 1 ps.1 However, other materials have been studied; and recently oxygen-rich, high resistivity GaAs grown by MOVPE2,3 has been shown to have subpicosecond free carrier lifetimes.4 The GaAs:O has several advantages over Lt-GaAs. For example, the GaAs:0 is thermally stable, eliminating the need for a cap layer, and the lifetime of the material can be easily tailored by varying the oxygen-doping concentration. In addition to these features, the ability to implant a high concentration of oxygen or oxygen (O) and aluminum (Al) directly into a standard GaAs substrate can have additional advantages, such as; ease of selective doping with independent control of the doping concentrations and depths. In addition, implantation is often more compatible with device processing. In this work, we have studied the effects of O and O-Al implantation on the lifetime of semi-insulating (SI) GaAs. We have shown that the O-implanted GaAs exhibits ultrafast carrier lifetimes, and that these results are consistent with the O-doped MOVPE grown samples.

© 1999 Optical Society of America

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