Abstract
Second harmonic generation (SHG) only occurs, in the dipole approximation, in material that is noninversion symmetric. Consequently, in material with bulk inversion symmetry, SHG only occurs near a surface or an interface that breaks the inversion symmetry.1 Substantial interest has been paid to SHG from the Si(100)/SiO2 interface because of its importance to the semiconductor industry. Results showing that SHG is sensitive to roughness at this interface2 have only furthered interest. Roughness is becoming critical as MOSFET gate oxide fhickness shrinks to nanometer scale with shrinking gate dimension.
© 1999 Optical Society of America
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