Abstract

Since it has been predicted that remarkable improvement of the threshold current density and temperature sensitivity will occur if quantum dots (QDs) are used as the active layer of semiconductor lasers,¹ several groups have attempted to fabricate quantum dot lasers. Recently, it has been of great interest that QDs will be also available for band structure engineering of semiconductor lasers and many groups have achieved the room temperature lasing at 1.3-µm using QDs surrounded with strain-reducing layer as the active layer of laser structure.^2–5 In this paper, we reported the over-1.5-µm luminescence at room temperature of InAs QDs in strained InGaAs quantum well (QW) grown by metalorganic chemical vapor deposition (MOCVD).

© 2001 Optical Society of America