Abstract
Metal apertures, with diameters down to 100 nm, on semiconductor quantum well (QW) samples have extensively been used to obtain subwavelength optical resolution in quantum dot experiments, e.g.1-5 When preparing such samples for time-resolved experiments, we have noticed that the optical properties of the semiconductor film underneath the metal aperture do not remain unchanged. Our investigations have shown (a) that this effect is intrinsic for a QW near the surface and (b) that the interplay of optically excited carriers and the built-in electrostatic potential well underneath the aperture leads to characteristic ring structures in luminescence images.
© 2001 Optical Society of America
PDF ArticleMore Like This
K. Matsuda, T. Saiki, H. Saito, K. Nishi, S. Nomura, and Y. Aoyagi
MH3_3 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2001
Jun Tatcbayashi, Masao Nishioka, and Yasuhiko Arakawa
QMJ6 Quantum Electronics and Laser Science Conference (CLEO:FS) 2001
Hyejin Kim, Jaehoon Kim, and Heonsu Jeon
CTuM35 Conference on Lasers and Electro-Optics (CLEO:S&I) 2001