Persistent photon-gated spectral hole burning in LiF:F2− color center crystal

V.V. Fedorov; S. B. Mirov; M. Ashenafi; Xie Liang

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 2001),
paper QPD12

Persistent photon-gated spectral hole burning in LiF:F₂⁻ color center crystal

V.V. Fedorov, S. B. Mirov, M. Ashenafi, and Xie Liang

Quantum Electronics and Laser Science Conference 2001

Baltimore, Maryland United States
6–10 May 2001
ISBN: 1-55752-663-X

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V. V. Fedorov, S. B. Mirov, M. Ashenafi, and X. Liang, "Persistent photon-gated spectral hole burning in LiF:F2− color center crystal," in Quantum Electronics and Laser Science Conference, G. Agrawal, Y. Yamamoto, T. Norris, and J. Thomas, eds., OSA Technical Digest (Optica Publishing Group, 2001), paper QPD12.

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Abstract

The spectral hole (SH) burning has attracted significant attention as a powerful technique for high resolution spectroscopy and may also have a potential use in optical memory. We report results on spectroscopic characterization and first persistent SH burning in the Zero Phonon Line (ZPL) transition of F₂⁻ Color Centers (CC) in LiF (LiF:F₂⁻) crystals. The F₂⁻ CCs can be considered as three electrons trapped by two adjacent anion vacancies with axial symmetry along (110) direction [1]. To produce F₂^* CCs LiF crystals were γ-irradiated at 300K with dose of 10⁸ rad using a ⁶⁰Co source. The maximum absorption coefficients of studied LiF:F₂⁻ crystals at room temperature were K=1-3cm⁻¹ (at λ=960 nm).

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