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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 2001),
  • paper QThI12

Ultrafast Electron Spin Relaxation in 6.1-Angstrom-Lattice-Constant Semiconductors

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Abstract

We describe ultrafast optical measurements of electron spin relaxation in InAs/GaSb superlattices with band gaps in the mid-infrared. Quantum structures comprised of semiconductors such as InAs and GaSb, with lattice constants of ~6.1-Å, are currently being explored for application to a variety of advanced electronic and optoelectronic devices, including resonant-interbandtunneling diodes and mid-infrared lasers and detectors.

© 2001 Optical Society of America

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