Optical Absorption Measurements from Single Semiconductor Quantum Dots

Xiaoqin Li; T.H. Stievater; J.R. Guest; D.G. Steel; D. Gammon; D.S. Katzer; D. Park

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 2001),
paper QTuE8

Optical Absorption Measurements from Single Semiconductor Quantum Dots

Xiaoqin Li, T.H. Stievater, J.R. Guest, D.G. Steel, D. Gammon, D.S. Katzer, and D. Park

Quantum Electronics and Laser Science Conference 2001

Baltimore, Maryland United States
6–10 May 2001
ISBN: 1-55752-663-X

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Poster Session 1 (QTuE)

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X. Li, T. H. Stievater, J. R. Guest, D. G. Steel, D. Gammon, D. S. Katzer, and D. Park, "Optical Absorption Measurements from Single Semiconductor Quantum Dots," in Quantum Electronics and Laser Science Conference, G. Agrawal, Y. Yamamoto, T. Norris, and J. Thomas, eds., OSA Technical Digest (Optica Publishing Group, 2001), paper QTuE8.

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Abstract

Size fluctuations in ensembles of semiconductor quantum dots lead to inhomogeneous broadening, which mask the intrinsic properties of individual quantum dots. In recent years, many research groups have chosen photoluminescence (PL) to optically probe individual quantum dots due to the sensitivity and simplicity of PL. However, the amount of information extracted from PL is limited. Absorption measurements can complement PL studies and provide important quantitative information such as dipole moments and dephasing rates without any complications arising from spectral and spatial diffusion.

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