Femtosecond Optical and X-Ray Measurement of the Semiconductor-to- Metal Transition in VO2

A. Cavalleri; Cs. Tóth; C.W. Siders; C.W. Siders; J.A. Squier; F. Raksi; P. Forget; J.C. Kieffer

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 2001),
paper QWF1

Femtosecond Optical and X-Ray Measurement of the Semiconductor-to- Metal Transition in VO₂

A. Cavalleri, Cs. Tóth, C.W. Siders, J.A. Squier, F. Raksi, P. Forget, and J.C. Kieffer

Quantum Electronics and Laser Science Conference 2001

Baltimore, Maryland United States
6–10 May 2001
ISBN: 1-55752-663-X

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Ultrafast Dynamics II (QWF)

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A. Cavalleri, C. Tóth, C. W. Siders, J. A. Squier, F. Raksi, P. Forget, and J. C. Kieffer, "Femtosecond Optical and X-Ray Measurement of the Semiconductor-to- Metal Transition in VO2," in Quantum Electronics and Laser Science Conference, G. Agrawal, Y. Yamamoto, T. Norris, and J. Thomas, eds., OSA Technical Digest (Optica Publishing Group, 2001), paper QWF1.

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Abstract

The dynamics of phase transformations in condensed phases have been intensely investigated for decades. While the use of ultrashort visible pulses has allowed measurement of ultrafast changes in the optical properties, the correlation between atomic movement and changes in the electronic properties of materials has proven more elusive. Ultrafast X-ray Diffraction¹ provides a direct way to retrieve lattice dynamics.²⁻⁴

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