Abstract
Gallium, confined at an interface with silica, has been found to respond dramatically to low power optical excitation when held at temperatures close to its melting point (29.8°C). Intensities of just a few kW/cm2 can reversibly modulate the intensity (by up to 40%) and phase (by as much as several degrees) of reflected light as the result of a light-induced structural transition occurring in a layer of gallium ~30 nm thick.1
© 2002 Optical Society of America
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