Analysis of Intrinsic Optical Bistability in Tm3+ Doped Crystals

M.A. Noginov; D. Casimir; M. Vondrova

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 2002),
paper QTuD6

Analysis of Intrinsic Optical Bistability in Tm³⁺ Doped Crystals

M.A. Noginov, D. Casimir, and M. Vondrova

Quantum Electronics and Laser Science Conference 2002

Long Beach, California United States
19–22 May 2002
ISBN: 1-55752-708-3

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THZ Generation and Nonlinear Opties in Nanostructures (QTuD)

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M. A. Noginov, D. Casimir, and M. Vondrova, "Analysis of Intrinsic Optical Bistability in Tm3+ Doped Crystals," in Quantum Electronics and Laser Science Conference, H. Gibbs, D. Wineland, D. Gammon, and D. Heinzen, eds., OSA Technical Digest (Optica Publishing Group, 2002), paper QTuD6.

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Abstract

The phenomenon of intrinsic optical bistability (IOB)¹ is of great interest because of its potential applications in optical switches, telecommunication, etc. In this work, we theoretically study IOB in Tm doped laser crystals co-doped with Ho and Yb.

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