Abstract
Second harmonic generation at the Si-SiO2, interface is sensitive the crystal orientation, including miscut and roughness,1 which is of technological importance in the semiconductor industry. Spectroscopic second-harmonic generation (SHG) studies have shown that a resonance occurs around the E1, transition energy of bulk Si at Si-SiO2 interfaces.2−4
© 2002 Optical Society of America
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