Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper QWA30

Bulk Contribution to Resonant Second- Harmonic Generation at Si-SiO2 Interfaces

Not Accessible

Your library or personal account may give you access

Abstract

Second harmonic generation at the Si-SiO2, interface is sensitive the crystal orientation, including miscut and roughness,1 which is of technological importance in the semiconductor industry. Spectroscopic second-harmonic generation (SHG) studies have shown that a resonance occurs around the E1, transition energy of bulk Si at Si-SiO2 interfaces.2−4

© 2002 Optical Society of America

PDF Article
More Like This
Separation of bulk and surface nonlinear contributions at Si(001)-SiO2 interface by clcctric-field-induced second-harmonic generation spectroscopy

O.A. Aktsipctrov, A. A. Fedyanin, A.V. Melnikov, J.I. Dadap, X.F. Hu, M.H. Anderson, M.C. Downer, and J.K. Lowell
QTuF6 European Quantum Electronics Conference (EQEC) 1996

Second harmonic generation from Si/SiO2: spectral and symmetry characteristics

J. T. Wright, S. T. Cundiff, K. W. Evans-Lutterodt, and M. L. Green
QThL7 Quantum Electronics and Laser Science Conference (CLEO:FS) 1999

Broadband Surface Second Harmonic Generation from Si/SiO2 Interfaces

S.T. Cundiff, W.H Knox, F.H. Baumann, P.K. Roy, and H.M. van Driel
FE.44 International Conference on Ultrafast Phenomena (UP) 1996

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved