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Conferences > QELS > 2002 > QWG > QWG1
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper QWG1

Carrier-wave Rabí Flopping in GaAs: Band Structure Effects and Influence of the Carrier-envelope Phase

O.D. Mücke, T. Tritschler, and M. Wegener

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Abstract

In our recent experiments on the model semiconductor GaAs using 5 fs pulses,1 the Rabi period became as short as 3 fs, which is comparable to the period of light of 2.9 fs at the GaAs band edge.

© 2002 Optical Society of America

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