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Conferences > QELS > 2003 > QTuM > QTuM6
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
  • Technical Digest (Optica Publishing Group, 2003),
  • paper QTuM6

Band offsets measurement of Si-SiO2 interfaces by internal photoemission induced second-harmonic generation

Z. Marka, R. Pasternak, Y. Jiang, S. N. Rashkeev, S. T. Pantelides, N. H. Tolk, P. K. Roy, and J. Kozub

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Abstract

We measured the Si valence to SiO2 conduction band offset via multiphoton internal-photoemission induced second-harmonic generation for the first time, providing a noninvasive sensitive tool for band offsets measurement in wide variety of semiconductor interfaces.

© 2003 Optical Society of America

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